Zn1-xcdxse (X=0.2-0.3) single-quantum-well laser diodes without gaas buffer layers

Shigeo Hayashi, Ayumu Tsujimura, Shigeo Yoshii, Kazuhiro Ohkawa, Mitsuyu Tsuneo

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

Laser diode action has been observed from a ZnSe-based single-quantum-well structure grown on GaAs substrates without GaAs buffer layers. The lasers emit coherent light under pulsed current injection at 77 K in a wide wavelength range from 490 nm to 520 nm depending on the quantum well composition ratio. In spite of uncoated facets, the lowest threshold current density of the lasers was as low as 160 A/cm2. The output power from the lasers exceeded 100 mW per facet.

Original languageEnglish (US)
Pages (from-to)L1478-L1480
JournalJapanese Journal of Applied Physics
Volume31
Issue number10
DOIs
StatePublished - Jan 1 1992

Keywords

  • Blue-green laser diodes
  • Buffer layer
  • Cl doping
  • Green laser diodes
  • Nitrogen radical doping
  • ZnSe
  • Zncdse

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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