ZnSe nanowires epitaxially grown on GaP(111) substrates by molecular-beam epitaxy

Y. F. Chan, X. F. Duan, S. K. Chan, I. K. Sou, X. X. Zhang, N. Wang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

104 Scopus citations

Abstract

The molecular-beam epitaxy growth of single crystalline ZnSe nanowires with uniform diameters on GaP(111) substrates was reported. It was shown that the growth process was based on the Au-catalyzed vapor-liquid-solid deposition. Along the (111) plane, the dominant defects were found to be twins at the interface between the substrate and the nanowires.

Original languageEnglish (US)
Pages (from-to)2665-2667
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number13
DOIs
StatePublished - Sep 29 2003
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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