Highly conductive p-type ZnSe layers have been grown by molecular beam epitaxy with nitrogen radical doping. Active nitrogens responsible for doping are N2 metastables in the A3Σ+u state. The free-hole concentration of N-doped ZnSe is of the order of 1017 cm-3 at room temperature. Laser diode action has been observed from ZnCdSe single quantum well structures grown on GaAs substrates without GaAs buffer layers. Coherent light was observed at 490-520 nm at 77 K. The minimum threshold current density was as low as 160 A/cm2 under pulsed operation.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering