ZnSe-based laser diodes and p-type doping of ZnSe

K. Ohkawa*, A. Tsujimura, S. Hayashi, S. Yoshii, T. Mitsuyu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

Highly conductive p-type ZnSe layers have been grown by molecular beam epitaxy with nitrogen radical doping. Active nitrogens responsible for doping are N2 metastables in the A3Σ+u state. The free-hole concentration of N-doped ZnSe is of the order of 1017 cm-3 at room temperature. Laser diode action has been observed from ZnCdSe single quantum well structures grown on GaAs substrates without GaAs buffer layers. Coherent light was observed at 490-520 nm at 77 K. The minimum threshold current density was as low as 160 A/cm2 under pulsed operation.

Original languageEnglish (US)
Pages (from-to)112-117
Number of pages6
JournalPhysica B: Physics of Condensed Matter
Volume185
Issue number1-4
DOIs
StatePublished - 1993
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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