Znse-based diode lasers with stripe-geometry fabricated by ion bombardment

Shigeo Yoshii, Shigeo Hayashi, Ayumu Tsujimura, Kazuhiro Ohkawa, Tsuneo Mltsuyu, Hidemi Takeishi, Yasuhito Takahashi, Tadashi Narusawa

Research output: Contribution to journalArticlepeer-review

Abstract

Current confinement of ZnSe-based diode lasers on p-GaAs substrates has been achieved by ion bombardment. Nitrogen ions were used for the bombardment to produce a high-resistivity region in n-Zn(S)Se cladding layer. The threshold current was reduced by one-third with the introduction of this current-blocking region. The devices showed laser action up to 150 K under pulsed current injection.

Original languageEnglish (US)
Pages (from-to)L1753-L1755
JournalJapanese Journal of Applied Physics
Volume32
Issue number12 A
DOIs
StatePublished - Jan 1 1993

Keywords

  • Far-field pattern
  • Ion bombardment
  • Semiconductor lasers
  • Threshold current
  • ZnCdSe
  • ZnSSe
  • ZnSe

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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