ZnO low-dimensional structures: Electrical properties measured inside a transmission electron microscope

Pedro Da Costa*, Dmitri Golberg, Guozhen Shen, Masanori Mitome, Yoshio Bando

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

The electrical properties of wurtzite-type ZnO low-dimensional structures were analysed using a scanning tunnelling microscopy (STM) in situ holder for transmission electron microscopes (TEM). Compared to similar studies in the literature employing nanowires or nanobelts, our work illustrates that rather complex structures can be reliably analysed with this technique. Through controlled contact manipulations it was possible to alter the systems I-V characteristics and, in separate experiments, to follow their electrical response to cycles of induced stress. Analysis of the I-V curves showed higher than expected resistances which, according to the detailed TEM characterisation, could be correlated with the considerable density of defects present. These defects accumulate in specific areas of the complex structural arrays of ZnO and represent high resistance points responsible for structural failure, when the systems are subjected to extreme current flows.

Original languageEnglish (US)
Pages (from-to)1460-1470
Number of pages11
JournalJournal of Materials Science
Volume43
Issue number4
DOIs
StatePublished - Feb 1 2008

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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