ZnO 1- x nanorod arrays/ZnO thin film bilayer structure: From homojunction diode and high-performance memristor to complementary 1D1R application

Chi Hsin Huang, Jian Shiou Huang, Shih Ming Lin, Wen Yuan Chang, Jr Hau He, Yu Lun Chueh*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

107 Scopus citations

Abstract

We present a ZnO 1-x nanorod array (NR)/ZnO thin film (TF) bilayer structure synthesized at a low temperature, exhibiting a uniquely rectifying characteristic as a homojunction diode and a resistive switching behavior as memory at different biases. The homojunction diode is due to asymmetric Schottky barriers at interfaces of the Pt/ZnO NRs and the ZnO TF/Pt, respectively. The ZnO 1-x NRs/ZnO TF bilayer structure also shows an excellent resistive switching behavior, including a reduced operation power and enhanced performances resulting from supplements of confined oxygen vacancies by the ZnO 1-x NRs for rupture and recovery of conducting filaments inside the ZnO TF layer. A hydrophobic behavior with a contact angle of ∼125° can be found on the ZnO 1-x NRs/ZnO TF bilayer structure, demonstrating a self-cleaning effect. Finally, a successful demonstration of complementary 1D1R configurations can be achieved by simply connecting two identical devices back to back in series, realizing the possibility of a low-temperature all-ZnO-based memory system.

Original languageEnglish (US)
Pages (from-to)8407-8414
Number of pages8
JournalACS Nano
Volume6
Issue number9
DOIs
StatePublished - Sep 25 2012
Externally publishedYes

Keywords

  • complementary 1D1R
  • homojunction diode
  • nonvolatile memory
  • resistive switching
  • ZnO nanorod arrays

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)
  • Physics and Astronomy(all)

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