Zinc oxide clad limited area epitaxy semipolar III-nitride laser diodes

A. Myzaferi, Asad J. Mughal, Daniel A. Cohen, Robert M. Farrell, Shuji Nakamura, James S. Speck, Steven P. DenBaars

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

We report continuous-wave (CW) blue semipolar (202̲1) III-nitride laser diodes (LDs) that incorporate limited area epitaxy (LAE) n-AlGaN bottom cladding with thin p-GaN and ZnO top cladding layers. LAE mitigates LD design limitations that arise from stress relaxation, while ZnO layers reduce epitaxial growth time and temperature. Numerical modeling indicates that ZnO reduces the internal loss and increases the differential efficiency of TCO clad LDs. Room temperature CW lasing was achieved at 445 nm for a ridge waveguide LD with a threshold current density of 10.4 kA/cm2, a threshold voltage of 5.8 V, and a differential resistance of 1.1 Ω.
Original languageEnglish (US)
Pages (from-to)12490
JournalOptics Express
Volume26
Issue number10
DOIs
StatePublished - May 1 2018
Externally publishedYes

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