Z-contrast imaging and EELS of dislocation cores at the Si/GaAs interface

S. Lopatin*, G. Duscher, S. J. Pennycook, M. F. Chisholm

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The interface between silicon and epitaxial GaAs thin film grown by metalorganic chemical vapor deposition was studied using atomic-resolution Z-contrast imaging. Z-contrast imaging provides chemical composition information and allows direct interpretation of micrographs. Electron energy loss spectroscopy (EELS) yields correlation between structure and chemistry. Different types of dislocation were identified at the Si/GaAs interface. Atomic structure of non-reconstructed 90° dislocation (exhibiting a dangling bond) is refined by means of computer simulations based on functional density theory. EELS form planar Si/GaAs interface and dislocation cores obtained and analyzed.

Original languageEnglish (US)
Pages (from-to)25-28
Number of pages4
JournalMaterials Research Society Symposium - Proceedings
Volume744
StatePublished - 2002
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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