X-ray diffraction study of InGaN/GaN superlattice interfaces

Kazuhide Kusakabe*, Kazuhiro Ohkawa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

The superlattice interfaces of InGaN/GaN were studied by using X-ray diffraction analysis. The thermal annealing at 1000°C was subjected to samples to estimate their thermal stability. It was found that the effects of thermal annealing on the structural and optical properties were dependent on the strain conditions of InGaN/GaN multiple quantum wells.

Original languageEnglish (US)
Pages (from-to)1839-1843
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number4
StatePublished - Jul 2003
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

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