Work function engineering using lanthanum oxide interfacial layers

Husam Niman Alshareef*, M. Quevedo-Lopez, H. C. Wen, R. Harris, P. Kirsch, P. Majhi, B. H. Lee, R. Jammy, D. J. Lichtenwalner, J. S. Jur, A. I. Kingon

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

108 Scopus citations

Abstract

A La2 O3 capping scheme has been developed to obtain n -type band-edge metal gates on Hf-based gate dielectrics. The viability of the technique is demonstrated using multiple metal gates that normally show midgap work function when deposited directly on HfSiO. The technique involves depositing a thin interfacial of La2 O3 on a Hf-based gate dielectric prior to metal gate deposition. This process preserves the excellent device characteristic of Hf-based dielectrics, but also allows the realization of band-edge metal gates. The effectiveness of the technique is demonstrated by fabricating fully functional transistor devices. A model is proposed to explain the effect of La2 O3 capping on metal gate work function.

Original languageEnglish (US)
Article number232103
JournalApplied Physics Letters
Volume89
Issue number23
DOIs
StatePublished - Dec 18 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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