Work function engineering of RuHf alloys as gate electrodes for future generation dual metal CMOS

H. C. Wen*, P. Majhi, Husam Niman Alshareef, C. Huffman, K. Choi, P. Lysaght, R. Harris, H. Luan, B. H. Lee, N. Yamada, S. Wickramanayaka

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

A novel material system Ru-Hf alloys was evaluated for its potential as future generation dual-metal CMOS electrode. It was observed that the effective work function of the alloy could be modulated from 4.3 to 4.8 eV by varying the Hf content in the Ru-Hf alloy from 65% to 0%. Additionally, comparison between the Ru-Hf (1:1) with Ru-Ta (1:1) suggests that the two alloy systems exhibit similar behavior in work function modulation.

Original languageEnglish (US)
Title of host publication2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers
Pages107-108
Number of pages2
DOIs
StatePublished - Oct 31 2005
Event2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH - Hsinchu, Taiwan, Province of China
Duration: Apr 25 2005Apr 27 2005

Publication series

Name2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers

Other

Other2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH
CountryTaiwan, Province of China
CityHsinchu
Period04/25/0504/27/05

ASJC Scopus subject areas

  • Engineering(all)

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