Wideband quantum-dash-in-well superluminescent diode at 1.6 μm

Henry S. Djie*, Clara E. Dimas, Boon S. Ooi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

We demonstrate broadband superluminescent diode at ∼1.6-μm peak emission wavelength using InAs-InAlGaAs quantum-dash-in-well structure on InP substrate. The fabricated device exhibits the close-to-Gaussian emission with a bandwidth of up to 140 nm. The device produces a low spectrum ripple of 0.3 dB and an integrated power of 1.7 mW with the corresponding bandwith of 110 nm measured at 20 °C under 8 kA/cm2.

Original languageEnglish (US)
Pages (from-to)1747-1749
Number of pages3
JournalIEEE Photonics Technology Letters
Volume18
Issue number16
DOIs
StatePublished - Aug 15 2006
Externally publishedYes

Keywords

  • Optical coherent tomography
  • Quantum-dash
  • Quantum-dot (QD)
  • Superluminescent diode (SLD)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Physics and Astronomy (miscellaneous)

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