Wideband integrated multiple laser chip on 1.55 μm heterostructure using controlled bandgap tuning by quantum well intermixing

V. Aimez*, J. Beauvais, J. Beerens, H. S. Lim, B. S. Ooi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Wideband integrated multiple laser chip on 1.55 μm heterostructure is studied using controlled bandgap tuning by quantum well intermixing (QWI). QWI is a key technology for advanced photonic integrated components fabrication, requiring integration of multiple bandgap values over a 150 nm range on a single substrate. It is shown that low energy ion implantation induced QWI is an efficient approach for post growth single step multiple bandgap tuning of high quality active and passive devices.

Original languageEnglish (US)
Title of host publicationConference on Lasers and Electro-Optics, 2001. CLEO 01. Technical Digest
Pages238
Number of pages1
StatePublished - 2001
Externally publishedYes
EventConference on Lasers and Electro-Optics (CLEO) - Baltimore, MD, United States
Duration: May 6 2001May 11 2001

Other

OtherConference on Lasers and Electro-Optics (CLEO)
CountryUnited States
CityBaltimore, MD
Period05/6/0105/11/01

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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