Wavy Channel architecture thin film transistor (TFT) using amorphous zinc oxide for high-performance and low-power semiconductor circuits

Amir Hanna, Aftab M. Hussain, Muhammad Mustafa Hussain

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

We report a Wavy Channel (WC) architecture thin film transistor (TFT) for extended device width by integrating continuous vertical fin like features with lateral continuous plane in the substrate. For a WC TFT which has 50% larger device width, the enhancement in the output drive current is 100%, when compared to a conventional planar TFT consuming the same chip area. This current increase is attributed to both the extra width and enhanced field effect mobility due to corner effects. This shows the potential of WC architecture to boast circuit performance without the need for aggressive gate length scaling. © 2015 IEEE.
Original languageEnglish (US)
Title of host publication2015 73rd Annual Device Research Conference (DRC)
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages201-202
Number of pages2
ISBN (Print)9781467381345
DOIs
StatePublished - Aug 12 2015

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