Wavelength tuning of InAs/InAlGaAs quantum-dash-in-well laser using postgrowth intermixing

H. S. Djie*, Y. Wang, Boon Ooi, D. N. Wang, J. C.M. Hwang, X. M. Fang, Ying Wu, J. M. Fastenau, W. K. Liu, G. T. Dang, W. H. Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

The first demonstration is reported of a bandgap tuned laser using InAs/InAlGaAs quantum-dash-in-well structures on an InP substrate, which utilises impurity-free induced intermixing. The intermixed laser exhibits comparable light-current characteristics after the bandgap is postgrowth-tuned by 100nm.

Original languageEnglish (US)
Pages (from-to)33-35
Number of pages3
JournalElectronics Letters
Volume43
Issue number1
DOIs
StatePublished - Jan 22 2007

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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