Wavelength tuning in InGaAs/InGaAsP quantum well lasers using pulsed-photoabsorption-induced disordering

T. K. Ong*, Y. C. Chan, Y. L. Lam, B. S. Ooi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

Pulsed-laser irradiation followed by rapid thermal annealing was used to induce layer disordering of an InGaAs/InGaAsP laser structure. A band gap shift larger than 160 nm was achieved using energy densities of about 3.9 mJ mm-2 with 4800 pulses of laser irradiation. Transmission electron microscopy and photoluminescence were used to understand the possible effect of the laser irradiation on the material structure. Band gap-tuned lasers exhibiting blueshift up to 82 nm were obtained. This approach offers the prospect of a powerful and relatively simple postgrowth process for integrating multiple-wavelength lasers for wavelength-division-multiplexing applications.

Original languageEnglish (US)
Pages (from-to)2637-2639
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number18
DOIs
StatePublished - Apr 30 2001
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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