Wavelength-tuned light emission via modifying the band edge symmetry: Doped SnO2 as an example

Hang Zhou, Rui Deng, Yongfeng Li, Bin Yao, Zhanhui Ding, Qingxiao Wang, Yu Han, Tao Wu, Lei Liu

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

We report the observation of ultraviolet photoluminescence and electroluminescence in indium-doped SnO2 thin films with modified "forbidden" bandgap. With increasing indium concentration in SnO 2, dominant visible light emission evolves into the ultraviolet regime in photoluminescence. Hybrid functional first-principles calculations demonstrate that the complex of indium dopant and oxygen vacancy breaks "forbidden" band gap to form allowed transition states. Furthermore, undoped and 10% indium-doped SnO2 layers are synthesized on p-type GaN substrates to obtain SnO2-based heterojunction light-emitting diodes. A dominant visible emission band is observed in the undoped SnO 2-based heterojunction, whereas strong near-ultraviolet emission peak at 398 nm is observed in the indium-doped SnO2-based heterojunction. Our results demonstrate an unprecedented doping-based approach toward tailoring the symmetry of band edge states and recovering ultraviolet light emission in wide-bandgap oxides. © 2014 American Chemical Society.
Original languageEnglish (US)
Pages (from-to)6365-6371
Number of pages7
JournalThe Journal of Physical Chemistry C
Volume118
Issue number12
DOIs
StatePublished - Mar 14 2014

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Electronic, Optical and Magnetic Materials

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