Wafer-scale single-orientation 2D layers by atomic edge-guided epitaxial growth

Yi Wan, Jui-Han Fu, Chih-Piao Chuu, Vincent Tung, Yumeng Shi, Lain-Jong Li

Research output: Contribution to journalArticlepeer-review

Abstract

Two-dimensional (2D) layered materials hold tremendous promise for post-Si nanoelectronics due to their unique optical and electrical properties. Significant advances have been achieved in device fabrication and synthesis routes for 2D nanoelectronics over the past decade; however, one major bottleneck preventing their immediate applications has been the lack of a reproducible approach for growing wafer-scale single-crystal films despite tremendous progress in recent experimental demonstrations. In this tutorial review, we provide a systematic summary of the critical factors—including crystal/substrate symmetry and energy consideration—necessary for synthesizing single-orientation 2D layers. In particular, we focus on the discussions of the atomic edge-guided epitaxial growth, which assists in unidirectional nucleation for the wafer-scale growth of single-crystal 2D layers.
Original languageEnglish (US)
JournalChemical Society Reviews
DOIs
StatePublished - 2022

ASJC Scopus subject areas

  • Chemistry(all)

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