Voltage-driven versus current-driven spin torque in anisotropic tunneling junctions

Aurelien Manchon

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


Nonequilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form T=T∥ M×(z× M)+T⊥ z× M, even in the absence of an external spin polarizer. For thick and large tunnel barriers, the torque reduces to the perpendicular component T⊥, which can be electrically tuned by applying a voltage across the insulator. In the limit of thin and low tunnel barriers, the in-plane torque T∥ emerges, proportional to the tunneling current density. Experimental implications on magnetic devices are discussed. © 2011 IEEE.
Original languageEnglish (US)
Pages (from-to)2735-2738
Number of pages4
JournalIEEE Transactions on Magnetics
Issue number10
StatePublished - Oct 2011

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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