Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge

G. Agostinelli*, A. Delabie, P. Vitanov, Z. Alexieva, H. F.W. Dekkers, Stefaan De Wolf, G. Beaucarne

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

383 Scopus citations

Abstract

Surface recombination velocities as low as 10 cm/s have been obtained by treated atomic layer deposition (ALD) of Al2O3 layers on p-type CZ silicon wafers. Low surface recombination is achieved by means of field induced surface passivation due to a high density of negative charges stored at the interface. In comparison to a diffused back surface field, an external field source allows for higher band bending, that is, a better performance. While this process yields state of the art results, it is not suited for large-scale production. Preliminary results on an industrially viable, alternative process based on a pseudo-binary system containing Al2O3 are presented, too. With this process, surface recombination velocities of 500-1000 cm/s have been attained on mc-Si wafers.

Original languageEnglish (US)
Pages (from-to)3438-3443
Number of pages6
JournalSolar Energy Materials and Solar Cells
Volume90
Issue number18-19
DOIs
StatePublished - Nov 23 2006

Keywords

  • AlO
  • Negative charges
  • Surface passivation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

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