Very fast light-induced degradation of a-Si:H/c-Si(100) interfaces

Stefaan De Wolf*, Bénédicte Demaurex, Antoine Descoeudres, Christophe Ballif

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

65 Scopus citations

Abstract

Light-induced degradation (LID) of crystalline silicon (c-Si) surfaces passivated with hydrogenated amorphous silicon (a-Si:H) is investigated. The initial passivation decays on polished c-Si(100) surfaces on a time scale much faster than usually associated with bulk a-Si:H LID. This phenomenon is absent for the a-Si:H/c-Si(111) interface. We attribute these differences to the allowed reconstructions on the respective surfaces. This may point to a link between the presence of so-called "fast" states and (internal) surface reconstruction in bulk a-Si:H.

Original languageEnglish (US)
Article number233301
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume83
Issue number23
DOIs
StatePublished - Jun 7 2011

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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