Variable range hopping conduction in n-Si NWs with focus-ion-beam-induced amorphization

Jian Ke, Jr-Hau He*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The galvanic wet etching was adopted to fabricate single-crystalline Si nanowires (NWs) at room temperature in HF/AgNO3 solution. The focus-ion-beam (FIB) direct-write technology was employed to connect the Si NW and Cr/Au electrode. The microstructure and morphology was studied in details, it demonstrates that the amorphization of Si NWs due to the irradiation of focused Ga ion beams. Temperature dependence of conductivity of an individual Si NW is investigated at the temperature ranges from t05K to 390K. The Mott's variable-range hopping (Mott-VRH) model is applied to the conduction due to disorder effect caused by FIB-Pt. Mott's parameters of Si NWs, such as hopping energy, hopping distance and density of states have been estimated.

Original languageEnglish (US)
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages1144-1145
Number of pages2
DOIs
StatePublished - May 5 2010
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: Jan 3 2010Jan 8 2010

Publication series

NameINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period01/3/1001/8/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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