Van der Waals epitaxy of MoS 2 layers using graphene as growth templates

Yumeng Shi, Wu Zhou, Ang Yu Lu, Wenjing Fang, Yi Hsien Lee, Allen Long Hsu, Soo Min Kim, Ki Kang Kim, Hui Ying Yang, Lain-Jong Li, Juan Carlos Idrobo, Jing Kong*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

728 Scopus citations

Abstract

We present a method for synthesizing MoS 2/Graphene hybrid heterostructures with a growth template of graphene-covered Cu foil. Compared to other recent reports,(1, 2) a much lower growth temperature of 400 °C is required for this procedure. The chemical vapor deposition of MoS 2 on the graphene surface gives rise to single crystalline hexagonal flakes with a typical lateral size ranging from several hundred nanometers to several micrometers. The precursor (ammonium thiomolybdate) together with solvent was transported to graphene surface by a carrier gas at room temperature, which was then followed by post annealing. At an elevated temperature, the precursor self-assembles to form MoS 2 flakes epitaxially on the graphene surface via thermal decomposition. With higher amount of precursor delivered onto the graphene surface, a continuous MoS 2 film on graphene can be obtained. This simple chemical vapor deposition method provides a unique approach for the synthesis of graphene heterostructures and surface functionalization of graphene. The synthesized two-dimensional MoS 2/Graphene hybrids possess great potential toward the development of new optical and electronic devices as well as a wide variety of newly synthesizable compounds for catalysts.

Original languageEnglish (US)
Pages (from-to)2784-2791
Number of pages8
JournalNano Letters
Volume12
Issue number6
DOIs
StatePublished - Jun 13 2012

Keywords

  • Chemical vapor deposition
  • STEM imaging
  • graphene
  • molybdenum disulfide
  • van der Waals epitaxy

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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