Vacancy-indium clusters in implanted germanium

Alexander I. Chroneos, R. Kube, Hartmut A. Bracht, Robin W. Grimes, Udo Schwingenschlögl

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

Secondary ion mass spectroscopy measurements of heavily indium doped germanium samples revealed that a significant proportion of the indium dose is immobile. Using electronic structure calculations we address the possibility of indium clustering with point defects by predicting the stability of indium-vacancy clusters, InnVm. We find that the formation of large clusters is energetically favorable, which can explain the immobility of the indium ions. © 2010 Elsevier B.V. All rights reserved.
Original languageEnglish (US)
Pages (from-to)38-40
Number of pages3
JournalChemical Physics Letters
Volume490
Issue number1-3
DOIs
StatePublished - Apr 2010

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

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