UV light emitting transparent conducting tin-doped indium oxide (ITO) nanowires

J. Gao, R. Chen, D. H. Li, L. Jiang, J. C. Ye, X. C. Ma, X. D. Chen, Q. H. Xiong, H. D. Sun, Tao Wu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

101 Scopus citations

Abstract

Multifunctional single crystalline tin-doped indium oxide (ITO) nanowires with tuned Sn doping levels are synthesized via a vapor transport method. The Sn concentration in the nanowires can reach 6.4at.% at a synthesis temperature of 840 °C, significantly exceeding the Sn solubility in ITO bulks grown at comparable temperatures, which we attribute to the unique feature of the vapor-liquid-solid growth. As a promising transparent conducting oxide nanomaterial, layers of these ITO nanowires exhibit a sheet resistance as low as and measurements on individual nanowires give a resistivity of 2.4 × 10-4Ωcm with an electron density up to 2.6 × 10 20cm-3, while the optical transmittance in the visible regime can reach ∼ 80%. Under the ultraviolet excitation the ITO nanowire samples emit blue light, which can be ascribed to transitions related to defect levels. Furthermore, a room temperature ultraviolet light emission is observed in these ITO nanowires for the first time, and the exciton-related radiative process is identified by using temperature-dependent photoluminescence measurements.

Original languageEnglish (US)
Article number195706
JournalNanotechnology
Volume22
Issue number19
DOIs
StatePublished - May 13 2011

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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