UV light emission from GZO/ZnO/GaN heterojunction diodes with carrier confinement layers

Min Yung Ke*, Tzu Chun Lu, Sheng Chieh Yang, Cheng Pin Chen, Yun Wei Cheng, Liang Yi Chen, Cheng Ying Chen, Jr-Hau He, Jian Jang Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

In this work, GZO/ZnO/GaN diodes with the light emitting ZnO layer sandwiched between two SiO2 thin films was fabricated and characterized. We observed a strong excitonic emission at the wavelength 377nm with the Mg2+ deep level transition and oxygen vacancy induced recombination significantly suppressed. In comparison, light emission from the GZO/GaN device (without SiO2 barriers) is mainly dominant by defect radiation. Furthermore, the device with confinement layers demonstrated a much higher UV intensity than the blue-green emission of the GZO/GaN pn device.

Original languageEnglish (US)
Pages (from-to)22912-22917
Number of pages6
JournalOptics Express
Volume17
Issue number25
DOIs
StatePublished - Dec 7 2009

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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