Understanding strain effects on double-gate FinFET drive-current enhancement, hot-carrier reliability and ring-oscillator delay performance via uniaxial wafer bending experiments

Sagar Suthram*, H. R. Harris, Muhammad Mustafa Hussain, C. Smith, C. D. Young, J. W. Yang, K. Mathews, K. Freeman, P. Majhi, H. H.H. Tseng, R. Jammy, Scott E. Thompson

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

Strain induced drive current enhancement on Double-Gate (DG) FinFETs from Contact Etch Stop Liners (CESLs) is modeled by performing wafer bending experiments. Longitudinal piezoresistance co-efficients for DG - FinFETs are extracted and shown to be different from the bulk Si values. This understanding is further used to gain insight into strain effects on FinFET Ring-Oscillator (RO) delay performance. FinFET hot-carrier degradation is observed to be enhanced for both tension and compression, and is explained to be due to increased irapactionization from strain induced bandgap narrowing at the drain-body junction.

Original languageEnglish (US)
Title of host publication2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
Pages163-164
Number of pages2
DOIs
StatePublished - Aug 14 2008
Event2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Hsinchu, Taiwan, Province of China
Duration: Apr 21 2008Apr 23 2008

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings

Other

Other2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
CountryTaiwan, Province of China
CityHsinchu
Period04/21/0804/23/08

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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