Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (

Erin C. Young, Benjamin P. Yonkee, Feng Wu, Burhan K. Saifaddin, Daniel A. Cohen, Steve P. DenBaars, Shuji Nakamura, James S. Speck

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

© 2015. In this paper we demonstrate ultraviolet (UV) light emitting diodes (LEDs) grown on metamorphic AlGaN buffers on freestanding GaN (202-1) substrates by ammonia assisted molecular beam epitaxy (MBE). Misfit and related threading dislocations were confined to the stress relaxed, compositionally graded buffer layers, and single quantum well devices emitting at 355, 310 and 274. nm were grown on top of the graded buffers. The devices showed excellent structural and electrical (I-. V) characteristics.
Original languageEnglish (US)
Pages (from-to)389-392
Number of pages4
JournalJournal of Crystal Growth
Volume425
DOIs
StatePublished - Sep 2015
Externally publishedYes

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