Ultrathin channels make transistors go faster

Research output: Contribution to journalArticlepeer-review

Abstract

Reducing the thickness of an amorphous conductive indium tin oxide layer down to a few nanometres has enabled the realization of 40-nm-long channel transistors with remarkable operating characteristics.
Original languageEnglish (US)
Pages (from-to)1033-1034
Number of pages2
JournalNature Materials
Volume18
Issue number10
DOIs
StatePublished - Sep 19 2019

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