Ultrafast Transient Terahertz Conductivity of Monolayer MoS 2 and WSe 2 Grown by Chemical Vapor Deposition

Callum J. Docherty, Patrick Parkinson, Hannah J. Joyce, Ming-Hui Chiu, Chang-Hsiao Chen, Ming-Yang Lee, Lain-Jong Li, Laura M. Herz, Michael B. Johnston

Research output: Contribution to journalArticlepeer-review

133 Scopus citations

Abstract

We have measured ultrafast charge carrier dynamics in monolayers and trilayers of the transition metal dichalcogenides MoS2 and WSe2 using a combination of time-resolved photoluminescence and terahertz spectroscopy. We recorded a photoconductivity and photoluminescence response time of just 350 fs from CVD-grown monolayer MoS2, and 1 ps from trilayer MoS2 and monolayer WSe2. Our results indicate the potential of these materials as high-speed optoelectronic materials.
Original languageEnglish (US)
Pages (from-to)11147-11153
Number of pages7
JournalACS Nano
Volume8
Issue number11
DOIs
StatePublished - Nov 4 2014

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01

Fingerprint Dive into the research topics of 'Ultrafast Transient Terahertz Conductivity of Monolayer MoS 2 and WSe 2 Grown by Chemical Vapor Deposition'. Together they form a unique fingerprint.

Cite this