Ultra-thin high quality oxynitride formed by NH3nitridation and high pressure O2Re-oxidation

T. Y. Luo*, V. H C Watt, H. N. Al-Shareef, G. A. Brown, A. Karamcheti, M. D. Jackson, H. R. Huff, B. Evans, D. L. Kwong

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, a novel technique to engineer the nitrogen profile in an ultra-thin silicon nitride-oxide gate stack is presented. It was found that the re-oxidation of silicon nitride, formed by NH3-nitridation, in a vertical high pressure (VHP) O2furnace effectively moves the nitrogen-rich layer toward the top interface by growing pure oxide underneath. The impact of NH3 nitridation temperature and VHP O2re-oxidation time on gate dielectric stack thickness was also investigated. Electrical measurements on NMOS transistors fabricated with this gate dielectric stack exhibit more than 10 times lower gate leakage currents, significantly enhanced drain current driveability, and comparable channel carrier mobility and hot carrier immunity, as compared to SiO2of similar effective thickness grown by rapid thermal oxidation (RTO)

Original languageEnglish (US)
Title of host publicationESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference
PublisherIEEE Computer Society
Pages404-407
Number of pages4
ISBN (Electronic)2863322486
ISBN (Print)9782863322482
DOIs
StatePublished - 2000
Externally publishedYes
Event30th European Solid-State Device Research Conference, ESSDERC 2000 - Cork, Ireland
Duration: Sep 11 2000Sep 13 2000

Other

Other30th European Solid-State Device Research Conference, ESSDERC 2000
CountryIreland
CityCork
Period09/11/0009/13/00

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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