Ultra-high-responsivity broadband detection of Si metal-semiconductor-metal schottky photodetectors improved by ZnO nanorod arrays

Dung Sheng Tsai, Chin An Lin, Wei Cheng Lien, Hung Chih Chang, Yuh Lin Wang, Jr-Hau He*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

132 Scopus citations

Abstract

This study describes a strategy for developing ultra-high-responsivity broadband Si-based photodetectors (PDs) using ZnO nanorod arrays (NRAs). The ZnO NRAs grown by a low-temperature hydrothermal method with large growth area and high growth rate absorb the photons effectively in the UV region and provide refractive index matching between Si and air for the long-wavelength region, leading to 3 and 2 orders of magnitude increase in the responsivity of Si metal-semiconductor-metal PDs in the UV and visible/NIR regions, respectively. Significantly enhanced performances agree with the theoretical analysis based on the finite-difference time-domain method. These results clearly demonstrate that Si PDs combined with ZnO NRAs hold high potential in next-generation broadband PDs.

Original languageEnglish (US)
Pages (from-to)7748-7753
Number of pages6
JournalACS Nano
Volume5
Issue number10
DOIs
StatePublished - Oct 25 2011

Keywords

  • ZnO
  • antireflection
  • nanorod
  • nanowire
  • photodetector
  • photodiode

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint

Dive into the research topics of 'Ultra-high-responsivity broadband detection of Si metal-semiconductor-metal schottky photodetectors improved by ZnO nanorod arrays'. Together they form a unique fingerprint.

Cite this