Ultra-high density out-of-plane strain sensor 3D architecture based on sub-20 nm PMOS FinFET

Mohamed T. Ghoneim, Nasir Alfaraj, Galo T. Sevilla, Muhammad Mustafa Hussain

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

Future wearable electronics require not only flexibility but also preservation of the perks associated with today's high-performance, traditional silicon electronics. In this work we demonstrate a state-of-the-art fin-shaped field-effect transistor (FinFET)-based, out-of-plane strain sensor on flexible silicon through transforming the bulk device in a transfer-less process. The device preserves the functionality and high performance associated with its bulk, inflexible state. Furthermore, gate leakage current shows sufficient dependence on the value of the applied out-of-plane strain that enables permits use of the flexible device as a switching device as well as a strain sensor.
Original languageEnglish (US)
Title of host publication2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO)
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1422-1425
Number of pages4
ISBN (Print)9781467381567
DOIs
StatePublished - Feb 3 2016

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