Future wearable electronics require not only flexibility but also preservation of the perks associated with today's high-performance, traditional silicon electronics. In this work we demonstrate a state-of-the-art fin-shaped field-effect transistor (FinFET)-based, out-of-plane strain sensor on flexible silicon through transforming the bulk device in a transfer-less process. The device preserves the functionality and high performance associated with its bulk, inflexible state. Furthermore, gate leakage current shows sufficient dependence on the value of the applied out-of-plane strain that enables permits use of the flexible device as a switching device as well as a strain sensor.
|Original language||English (US)|
|Title of host publication||2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO)|
|Publisher||Institute of Electrical and Electronics Engineers (IEEE)|
|Number of pages||4|
|State||Published - Feb 3 2016|