Tuning Hot Carrier Cooling Dynamics by Dielectric Confinement in Two-Dimensional Hybrid Perovskite Crystals

Jun Yin, Partha Maity, Rounak Naphade, Bin Cheng, Jr-Hau He, Osman Bakr, Jean-Luc Bredas, Omar F. Mohammed

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

Hot carrier (HC) cooling is a critical photophysical process that significantly influences the optoelectronic performance of hybrid perovskite-based devices. The hot carrier extraction at the device interface is very challenging because of its ultrashort lifetime. Here, ultrafast transient reflectance spectroscopy measurements and time-domain ab initio calculations show how the dielectric constant of the organic spacers can control and slow the HC cooling dynamics in single-crystal 2D Ruddlesden–Popper hybrid perovskites. We find that (EA)2PbI4 (EA = HOC2H4NH3+) that correspond to a high dielectric constant organic spacer has a longer HC cooling time compared to that of (AP)2PbI4 (AP = HOC3H6NH3+) and (PEA)2PbI4 (PEA = C6H5C2H4NH3+). The slow HC relaxation process in the former case can be ascribed to a stronger screening of the Coulomb interactions, a small nonradiative internal conversion within the conduction bands, as well as a weak electron–phonon coupling. Our findings provide a strategy to prolong the hot carrier cooling time in low-dimensional hybrid perovskite materials by using organic spacers with reduced dielectric confinement.
Original languageEnglish (US)
Pages (from-to)12621-12629
Number of pages9
JournalACS Nano
Volume13
Issue number11
DOIs
StatePublished - Oct 21 2019

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported by the King Abdullah University of Science and Technology (KAUST). The work at Georgia Tech was supported by the Georgia Research Alliance and the Vasser-Woolley Foundation. We acknowledge the Supercomputing Laboratory at KAUST for their computational and storage resources, as well as their gracious assistance. We also acknowledge Dr. J. Khan for the discussions.

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