Tunable transport properties of n-type ZnO nanowires by Ti plasma immersion ion implantation

L. Liao, Z. Zhang, Y. Yang, B. Yan, H. T. Cao, L. L. Chen, G. P. Li, Tao Wu, Z. X. Shen, B. K. Tay, T. Yu*, X. W. Sun

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

Single-crystalline, transparent conducting ZnO nanowires were obtained simply by Ti plasma immersion ion implantation (PIII). Electrical transport characterizations demonstrate that the n -type conduction of ZnO nanowire could be tuned by appropriate Ti-PIII. When the energy of PIII is increased, the resistivity of ZnO decreases from 4× 102 to 3.3× 10-3 cm, indicating a semiconductor-metal transition. The failure-current densities of the metallic ZnO could be up to 2.75× 107 A/ cm2. Therefore, this facile method may provide an inexpensive alternative to tin doped indium oxide as transparent conducting oxide materials.

Original languageEnglish (US)
Article number076104
JournalJournal of Applied Physics
Volume104
Issue number7
DOIs
StatePublished - Oct 22 2008

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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