Trilayered MoS2 metal -Semiconductor-metal photodetectors: Photogain and radiation resistance

Dung Sheng Tsai, Der Hsien Lien, Meng Lin Tsai, Sheng Han Su, Kuan Ming Chen, Jr Jian Ke, Yueh Chung Yu, Lain-Jong Li, Jr-Hau He

Research output: Contribution to journalArticlepeer-review

31 Scopus citations

Abstract

Trilayered MoS2 metal-semiconductor-metal (MSM) photodetectors (PDs) exhibit the photogain is up to 24 with high responsivity (∼1.04 A/W). This is because photocarriers generated at the MoS2 between two Au electrodes drift toward the metal-semiconductor interfaces due to band bending under applied bias and are then trapped at the surface state sites at the Au/MoS2 interfaces, giving rise to the decrease in Schottky barrier height. Moreover, MoS2 MSM PDs show fast operation speed; as the contact spacing reduces from 8 to 4 μm, the rise time and fall time of PDs reduce from 70 to 40 μs and from 110 to 50 μs, respectively. Trilayered MoS2 MSM PDs can operate even after 2-MeV proton illumination with ∼1011 cm-2 fluences, indicating the high radiation tolerance. This work demonstrates that trilayer MoS2 opens up a new dimension for 2-D nanomaterial applications in harsh electronics.

Original languageEnglish (US)
Article number6553644
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume20
Issue number1
DOIs
StatePublished - Jan 1 2014

Keywords

  • Graphene
  • MoS
  • Radiation resistance
  • harsh environment
  • photodetector

ASJC Scopus subject areas

  • Ceramics and Composites
  • Atomic and Molecular Physics, and Optics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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