Trap-free, space-charge-limited currents in a polyfluorene copolymer using pretreated indium tin oxide as a hole injecting contact

A. J. Campbell, D. D.C. Bradley, H. Antoniadis

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20 Scopus citations

Abstract

We report time-of-flight, transient dark injection (DI) and current density versus voltage measurements on polyfluorene copolymer diode structures using pretreated indium tin oxide (ITO) as a hole injecting contact. For ITO exposed to an oxygen plasma, coated in poly(ethylenedioxythiophene)/polystyrenesulphonic acid, or with both treatments, all measurements were entirely consistent with positive carrier, trap-free, space-charge-limited current theory. For untreated ITO, the behaviour is instead injection limited.
Original languageEnglish (US)
JournalSynthetic Metals
Volume122
Issue number1
DOIs
StatePublished - May 1 2001
Externally publishedYes

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