Transmission electron microscopy study of fluorine and boron implanted and annealed GaAs/AlGaAs

B. S. Ooi*, A. C. Bryce, J. H. Marsh, J. Martin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

The residual damage in fluorine and boron ion implanted GaAs/AlGaAs has been studied using transmission electron microscopy both before and after rapid thermal processing. The results showed no extended defects in as-implanted materials. A dense network of interstitial dislocation loops has been observed in boron implanted samples after annealing. Most of these dislocation defects were located in GaAs layers rather than in AlGaAs layers. Only a small number of dislocation loops were found in the fluorine implanted and annealed material. Compared to boron, fluorine is a better candidate for neutral impurity induced disordering applications.

Original languageEnglish (US)
Pages (from-to)85-87
Number of pages3
JournalApplied Physics Letters
Volume65
Issue number1
DOIs
StatePublished - 1994
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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