Toward high-performance solution-processed carbon nanotube network transistors by removing nanotube bundles

Chun Wei Lee, Cheng Hui Weng, Li Wei, Yuan Chen, Mary B. Chan-Park, Chuen Horng Tsai, Keh Chyang Leou, C. H.Patrick Poa, Junling Wang, Lain-Jong Li*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

56 Scopus citations

Abstract

Reported solution-processed field-effect transistor (FET) devices based on single-walled carbon nanotube (SWNT) networks have either high mobility but low on/off ratio or vice versa. Recently, Arnold et al. (Nat. Nanotechnol. 2006, 1, 60-65) have made significant improvements in obtaining semiconductor-enriched SWNTs by using density-gradient ultracentrifugation. Here, we report that removing the SWNT bundles using organic - aqueous interfacial purification can further enhance the electrical performance of SWNT-FETs. The on/off ratio of the SWNT-FET is improved by ∼1 order of magnitude. By combining density-gradient ultracentrifugation and interfacial purification, it is possible to obtain high on/off ratio and high mobility of solution-processed SWNT-FETs at a promising yield.

Original languageEnglish (US)
Pages (from-to)12089-12091
Number of pages3
JournalJournal of Physical Chemistry C
Volume112
Issue number32
DOIs
StatePublished - Aug 14 2008

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

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