Toward Annealing-Stable Molybdenum-Oxide-Based Hole-Selective Contacts For Silicon Photovoltaics

Stephanie Essig, Julie Dréon, Esteban Rucavado, Mathias Mews, Takashi Koida, Mathieu Boccard, Jérémie Werner, Jonas Geissbühler, Philipp Löper, Monica Morales-Masis, Lars Korte, Stefaan De Wolf, Christophe Balllif

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

Molybdenum oxide (MoOX) combines a high work function with broadband optical transparency. Sandwiched between a hydrogenated intrinsic amorphous silicon passivation layer and a transparent conductive oxide, this material allows a highly efficient hole-selective front contact stack for crystalline silicon solar cells. However, hole extraction from the Si wafer and transport through this stack degrades upon annealing at 190 °C, which is needed to cure the screen-printed Ag metallization applied to typical Si solar cells. Here, we show that effusion of hydrogen from the adjacent layers is a likely cause for this degradation, highlighting the need for hydrogen-lean passivation layers when using such metal-oxide-based carrier-selective contacts. Pre-MoOX-deposition annealing of the passivating a-Si:H layer is shown to be a straightforward approach to manufacturing MoOX-based devices with high fill factors using screen-printed metallization cured at 190 °C.
Original languageEnglish (US)
Pages (from-to)1700227
JournalSolar RRL
Volume2
Issue number4
DOIs
StatePublished - Feb 21 2018

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