Topography study on 45nm CuCMP low-k process and its impact on defectivity and resistance

Feng Zhao*, Benfu Lin, Hong Yu, San Leong Lup, Xianbin Wang, Mei Sheng Zhou, Haigou Huang, Hong Wu, Fan Zhang, Jun Chen, Chao Zhang Bei

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Topography study was conducted under different polishing condition, and it's impact on defectivity and in line test performance was investigated. The topography study showed that final dishing and erosion performance is mostly driven by barrier polishing condition. With existing high selectivity barrier slurry, local Cu protruded in narrow dense arrays, and slightly higher down-force can suppress the Cu protrusion. Low selectivity barrier slurry shows less topography, and affords less polishing scratch. Electrical data shows barrier polishing condition has significant impact on resistance rather than Cu clearing over-polishing step.

Original languageEnglish (US)
Title of host publicationAdvanced Metallization Conference 2008, AMC 2008
Pages457-462
Number of pages6
StatePublished - Oct 19 2009
EventAdvanced Metallization Conference 2008, AMC 2008 - San Diego, CA, United States
Duration: Sep 23 2008Sep 25 2008

Publication series

NameAdvanced Metallization Conference (AMC)
ISSN (Print)1540-1766

Other

OtherAdvanced Metallization Conference 2008, AMC 2008
CountryUnited States
CitySan Diego, CA
Period09/23/0809/25/08

ASJC Scopus subject areas

  • Materials Science(all)
  • Industrial and Manufacturing Engineering

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