Top-emitting 980-nm vertical-cavity surface-emitting laser diodes with improved optical power

A. N. Al-Omari*, M. S. Alias, K. L. Lear

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Top-emitting, oxide-confined, polyimide-planarized 980-nm VCSELs with copper-plated heatsinks were fabricated and characterized. Increasing the plated heatsink radius from 0-μm to 4-μm larger than the mesa diameter for lasers with 8-μm oxide aperture diameter reduced the measured thermal impedance, increased the maximum bias current density, and increased the maximum output optical power achieved by a 29%, 37%, and 73%, respectively. VCSELs with oxide aperture diameter and heatsink overlap of 8-μm and 4-μm, respectively, demonstrated 17°C decrease in the internal device temperature (i.e. active region temperature) at the maximum output optical power. Devices with similar mesa diameters of 26-μm and different heatsink overlaps exhibited a threshold bias current and a total series resistance of (630±4%)μA and ∼95Ω, respectively.

Original languageEnglish (US)
Title of host publicationICP 2012 - 3rd International Conference on Photonics 2012, Proceedings
Pages76-79
Number of pages4
DOIs
StatePublished - 2012
Externally publishedYes
Event3rd International Conference on Photonics, ICP 2012 - Penang, Malaysia
Duration: Oct 1 2012Oct 3 2012

Other

Other3rd International Conference on Photonics, ICP 2012
CountryMalaysia
CityPenang
Period10/1/1210/3/12

Keywords

  • Cu-plated
  • Laser diodes
  • metal heatsinks
  • Semiconductor lasers
  • Thermal resistance
  • VCSELs

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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