Abstract
Top-emitting, oxide-confined, polyimide-planarized 980-nm VCSELs with copper-plated heatsinks were fabricated and characterized. Increasing the plated heatsink radius from 0-μm to 4-μm larger than the mesa diameter for lasers with 8-μm oxide aperture diameter reduced the measured thermal impedance, increased the maximum bias current density, and increased the maximum output optical power achieved by a 29%, 37%, and 73%, respectively. VCSELs with oxide aperture diameter and heatsink overlap of 8-μm and 4-μm, respectively, demonstrated 17°C decrease in the internal device temperature (i.e. active region temperature) at the maximum output optical power. Devices with similar mesa diameters of 26-μm and different heatsink overlaps exhibited a threshold bias current and a total series resistance of (630±4%)μA and ∼95Ω, respectively.
Original language | English (US) |
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Title of host publication | ICP 2012 - 3rd International Conference on Photonics 2012, Proceedings |
Pages | 76-79 |
Number of pages | 4 |
DOIs | |
State | Published - 2012 |
Externally published | Yes |
Event | 3rd International Conference on Photonics, ICP 2012 - Penang, Malaysia Duration: Oct 1 2012 → Oct 3 2012 |
Other
Other | 3rd International Conference on Photonics, ICP 2012 |
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Country | Malaysia |
City | Penang |
Period | 10/1/12 → 10/3/12 |
Keywords
- Cu-plated
- Laser diodes
- metal heatsinks
- Semiconductor lasers
- Thermal resistance
- VCSELs
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics