Top-emitting 980-nm vertical-cavity surface-emitting laser diodes with improved optical power

A. N. Al-Omari; M. S. Alias; K. L. Lear

doi:10.1109/ICP.2012.6379873

Top-emitting 980-nm vertical-cavity surface-emitting laser diodes with improved optical power

A. N. Al-Omari^*, M. S. Alias, K. L. Lear

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Top-emitting, oxide-confined, polyimide-planarized 980-nm VCSELs with copper-plated heatsinks were fabricated and characterized. Increasing the plated heatsink radius from 0-μm to 4-μm larger than the mesa diameter for lasers with 8-μm oxide aperture diameter reduced the measured thermal impedance, increased the maximum bias current density, and increased the maximum output optical power achieved by a 29%, 37%, and 73%, respectively. VCSELs with oxide aperture diameter and heatsink overlap of 8-μm and 4-μm, respectively, demonstrated 17°C decrease in the internal device temperature (i.e. active region temperature) at the maximum output optical power. Devices with similar mesa diameters of 26-μm and different heatsink overlaps exhibited a threshold bias current and a total series resistance of (630±4%)μA and ∼95Ω, respectively.

Original language	English (US)
Title of host publication	ICP 2012 - 3rd International Conference on Photonics 2012, Proceedings
Pages	76-79
Number of pages	4
DOIs	https://doi.org/10.1109/ICP.2012.6379873
State	Published - 2012
Externally published	Yes
Event	3rd International Conference on Photonics, ICP 2012 - Penang, Malaysia Duration: Oct 1 2012 → Oct 3 2012

Other

Other	3rd International Conference on Photonics, ICP 2012
Country	Malaysia
City	Penang
Period	10/1/12 → 10/3/12

Keywords

Cu-plated
Laser diodes
metal heatsinks
Semiconductor lasers
Thermal resistance
VCSELs

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.1109/ICP.2012.6379873

Cite this

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title = "Top-emitting 980-nm vertical-cavity surface-emitting laser diodes with improved optical power",

abstract = "Top-emitting, oxide-confined, polyimide-planarized 980-nm VCSELs with copper-plated heatsinks were fabricated and characterized. Increasing the plated heatsink radius from 0-μm to 4-μm larger than the mesa diameter for lasers with 8-μm oxide aperture diameter reduced the measured thermal impedance, increased the maximum bias current density, and increased the maximum output optical power achieved by a 29%, 37%, and 73%, respectively. VCSELs with oxide aperture diameter and heatsink overlap of 8-μm and 4-μm, respectively, demonstrated 17°C decrease in the internal device temperature (i.e. active region temperature) at the maximum output optical power. Devices with similar mesa diameters of 26-μm and different heatsink overlaps exhibited a threshold bias current and a total series resistance of (630±4%)μA and ∼95Ω, respectively.",

keywords = "Cu-plated, Laser diodes, metal heatsinks, Semiconductor lasers, Thermal resistance, VCSELs",

author = "Al-Omari, {A. N.} and Alias, {M. S.} and Lear, {K. L.}",

year = "2012",

doi = "10.1109/ICP.2012.6379873",

language = "English (US)",

isbn = "9781467314633",

pages = "76--79",

booktitle = "ICP 2012 - 3rd International Conference on Photonics 2012, Proceedings",

note = "3rd International Conference on Photonics, ICP 2012 ; Conference date: 01-10-2012 Through 03-10-2012",

}

TY - GEN

T1 - Top-emitting 980-nm vertical-cavity surface-emitting laser diodes with improved optical power

AU - Al-Omari, A. N.

AU - Alias, M. S.

AU - Lear, K. L.

PY - 2012

Y1 - 2012

N2 - Top-emitting, oxide-confined, polyimide-planarized 980-nm VCSELs with copper-plated heatsinks were fabricated and characterized. Increasing the plated heatsink radius from 0-μm to 4-μm larger than the mesa diameter for lasers with 8-μm oxide aperture diameter reduced the measured thermal impedance, increased the maximum bias current density, and increased the maximum output optical power achieved by a 29%, 37%, and 73%, respectively. VCSELs with oxide aperture diameter and heatsink overlap of 8-μm and 4-μm, respectively, demonstrated 17°C decrease in the internal device temperature (i.e. active region temperature) at the maximum output optical power. Devices with similar mesa diameters of 26-μm and different heatsink overlaps exhibited a threshold bias current and a total series resistance of (630±4%)μA and ∼95Ω, respectively.

AB - Top-emitting, oxide-confined, polyimide-planarized 980-nm VCSELs with copper-plated heatsinks were fabricated and characterized. Increasing the plated heatsink radius from 0-μm to 4-μm larger than the mesa diameter for lasers with 8-μm oxide aperture diameter reduced the measured thermal impedance, increased the maximum bias current density, and increased the maximum output optical power achieved by a 29%, 37%, and 73%, respectively. VCSELs with oxide aperture diameter and heatsink overlap of 8-μm and 4-μm, respectively, demonstrated 17°C decrease in the internal device temperature (i.e. active region temperature) at the maximum output optical power. Devices with similar mesa diameters of 26-μm and different heatsink overlaps exhibited a threshold bias current and a total series resistance of (630±4%)μA and ∼95Ω, respectively.

KW - Cu-plated

KW - Laser diodes

KW - metal heatsinks

KW - Semiconductor lasers

KW - Thermal resistance

KW - VCSELs

UR - http://www.scopus.com/inward/record.url?scp=84872077554&partnerID=8YFLogxK

U2 - 10.1109/ICP.2012.6379873

DO - 10.1109/ICP.2012.6379873

M3 - Conference contribution

AN - SCOPUS:84872077554

SN - 9781467314633

SP - 76

EP - 79

BT - ICP 2012 - 3rd International Conference on Photonics 2012, Proceedings

T2 - 3rd International Conference on Photonics, ICP 2012

Y2 - 1 October 2012 through 3 October 2012

ER -

Top-emitting 980-nm vertical-cavity surface-emitting laser diodes with improved optical power

Abstract

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Keywords

ASJC Scopus subject areas

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