TMD FinFET with 4 nm thin body and back gate control for future low power technology

Min Cheng Chen, Kai Shin Li, Lain-Jong Li, Ang-Yu Lu, Ming-yang Li, Yung Huang Chang, Chang Hsien Lin, Yi Ju Chen, Yun Fang Hou, Chun Chi Chen, Bo Wei Wu, Cheng San Wu, Ivy Yang, Yao Jen Lee, Jia Min Shieh, Wen Kuan Yeh, Jyun Hong Shih, Po Cheng Su, Angada B. Sachid, Tahui WangFu Liang Yang, Chenming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

17 Scopus citations

Abstract

A 4 nm thin transition-metal dichalcogenide (TMD) body FinFET with back gate control is proposed and demonstrated for the first time. The TMD FinFET channel is deposited by CVD. Hydrogen plasma treatment of TMD is employed to lower the series resistance for the first time. The 2 nm thin back gate oxide enables 0.5 V of Vth shift with 1.2 V change in back bias for correcting device variations and dynamically configuring a device as a high performance or low leakage device. TMD can potentially provide sub-nm thin monolayer body needed for 2 nm node FinFET.

Original languageEnglish (US)
Title of host publication2015 IEEE International Electron Devices Meeting, IEDM 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages32.2.1-32.2.4
ISBN (Electronic)9781467398930
DOIs
StatePublished - Feb 16 2015
Event61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States
Duration: Dec 7 2015Dec 9 2015

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2016-February
ISSN (Print)0163-1918

Other

Other61st IEEE International Electron Devices Meeting, IEDM 2015
CountryUnited States
CityWashington
Period12/7/1512/9/15

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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