We present the analysis of threshold conditions that produces wideband- stimulated emission in semiconductor quantum-dot laser. Our theoretical model reveals critical occurrence of broadband lasing when the energy spacing between quantized energy states (ΔE) is comparable to the inhomogeneous broadening of quantum dot nanostructures.
- Inhomogeneous broadening
- Semiconductor laser
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering