Three dimensional semiconductor quantum-dot model

Research output: Contribution to journalComment/debatepeer-review

Abstract

A novel approach to model semiconductor quantum dots and their high temperature interdiffusion effects in 3-D was developed. It was observed that both electronic and optical properties of the dot alter significantly under moderately high temperature treatment during epitaxial growth. The model will predict the process temperature that can be tolerated by the quantum-dots during epitaxial growth and post growth processing to increase the manufacturing yield. The advantage of the model is the significant reduction of routine calculations to handle the masive and complex Hamiltonian matrix.

Original languageEnglish (US)
Number of pages1
JournalIII-Vs Review
Volume18
Issue number5
DOIs
StatePublished - Jun 1 2005

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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