Thin-Film Solar Cells with InP Absorber Layers Directly Grown on Nonepitaxial Metal Substrates

Maxwell Zheng, Hsin Ping Wang, Carolin M. Sutter-Fella, Corsin Battaglia, Shaul Aloni, Xufeng Wang, James Moore, Jeffrey W. Beeman, Mark Hettick, Matin Amani, Wei Tse Hsu, Joel W. Ager, Peter Bermel, Mark Lundstrom, Jr-Hau He, Ali Javey

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13 Scopus citations

Abstract

The design and performance of solar cells based on InP grown by the nonepitaxial thin-film vapor-liquid-solid (TF-VLS) growth technique is investigated. The cell structure consists of a Mo back contact, p-InP absorber layer, n-TiO2 electron selective contact, and indium tin oxide transparent top electrode. An ex situ p-doping process for TF-VLS grown InP is introduced. Properties of the cells such as optoelectronic uniformity and electrical behavior of grain boundaries are examined. The power conversion efficiency of first generation cells reaches 12.1% under simulated 1 sun illumination with open-circuit voltage (VOC) of 692 mV, short-circuit current (JSC) of 26.9 mA cm-2, and fill factor (FF) of 65%. The FF of the cell is limited by the series resistances in the device, including the top contact, which can be mitigated in the future through device optimization. The highest measured VOC under 1 sun is 692 mV, which approaches the optically implied VOC of ≈795 mV extracted from the luminescence yield of p-InP. The design and performance of solar cells based on indium phosphide (InP) grown by the nonepitaxial thin-film vapor-liquid-solid growth technique is investigated. The cell structure consists of a Mo back contact, p-InP absorber layer, n-TiO2 electron selective contact, and an indium tin oxide transparent top electrode. The highest measured open circuit voltage (VOC) under 1 sun is 692 mV, which approaches the optically implied VOC of ≈795 mV extracted from the luminescence yield of p-InP.
Original languageEnglish (US)
Pages (from-to)1501337
JournalAdvanced Energy Materials
Volume5
Issue number22
DOIs
StatePublished - Aug 25 2015

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