Thin Film growth and characterization of Ti doped ZnO by RF/DC magnetron sputtering

M. Baseer Haider, Mohammad F. Al-Kuhaili, S. M A Durrani, Venkatesh Singaravelu, Iman S. Roqan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Thin film Ti doped ZnO (Ti-ZnO) film were grown on sapphire (0001) substrate by RF and DC magnetron sputtering. Films were grown at a substrate temperature of 250 °C with different Ti/Zn concentration. Surface chemical study of the samples was performed by X-ray photoelectron spectroscopy to determine the stoichiometry and Ti/Zn ratio for all samples. Surface morphology of the samples were studied by atomic force microscopy. X-ray diffraction was carried out to determine the crystallinity of the film. No secondary phases of TixOy was observed. We observed a slight increase in the lattice constant with the increase in Ti concentration in ZnO. No ferromagnetic signal was observed for any of the samples. However, some samples showed super-paramagnetic phase. © 2015 Materials Research Society.
Original languageEnglish (US)
Title of host publicationMRS Proceedings
PublisherCambridge University Press (CUP)
Pages55-60
Number of pages6
ISBN (Print)9781510806122
DOIs
StatePublished - Apr 15 2015

Fingerprint Dive into the research topics of 'Thin Film growth and characterization of Ti doped ZnO by RF/DC magnetron sputtering'. Together they form a unique fingerprint.

Cite this