Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor deposition

Hua Tong*, Jing Zhang, Guangyu Liu, Juan A. Herbsommer, G. S. Huang, Nelson Tansu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

72 Scopus citations

Abstract

Thermoelectric properties of lattice-matched AlInN grown by metal organic chemical vapor deposition were measured and analyzed. The n-type Al0.83 In0.17 N alloy exhibited thermal conductivity of 4.87 W/(m K) measured by 3ω differential method. The Seebeck coefficient of n-Al0.83 In0.17 N was measured as-6.012× 10-4 V/K by thermal gradient method. The sheet resistivity of n-Al0.83 In0.17 N was measured by using Van der Pauw method, and the electrical conductivity was measured as 2.38× 104/( m). The thermoelectric figure of merit (Z T) of n-type Al0.83 In0.17 N was measured as 0.532 at room temperature (T=300 K). The finding indicates lattice-matched AlInN alloy on GaN as excellent material candidate for thermoelectric application.

Original languageEnglish (US)
Article number112105
JournalApplied Physics Letters
Volume97
Issue number11
DOIs
StatePublished - Sep 13 2010

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this