Thermally stable N-metal gate MOSFETs using La-incorporated HfSiO dielectric

Husam Niman Alshareef, H. R. Harris, H. C. Wen, C. S. Park, C. Huffman, K. Choi, H. F. Luan, P. Majhi, B. H. Lee, R. Jammy, D. J. Lichtenwalner, J. S. Jur, A. I. Kingon

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

57 Scopus citations

Abstract

We report a thermally stable N-metal process in which surface passivation of HfSiO dielectric using thin layers of La2O3, deposited by either MBE or PVD, significantly shifts the metal gate effective work function toward the Si conduction band edge. Well-behaved transistors with Lg down to 70 nm have been fabricated with threshold voltage of 0.25V, mobility up to 92% of the universal SiO2 mobility, and T inv∼1.6nm.

Original languageEnglish (US)
Title of host publication2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers
Pages7-8
Number of pages2
StatePublished - Dec 1 2006
Event2006 Symposium on VLSI Technology, VLSIT - Honolulu, HI, United States
Duration: Jun 13 2006Jun 15 2006

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Other

Other2006 Symposium on VLSI Technology, VLSIT
CountryUnited States
CityHonolulu, HI
Period06/13/0606/15/06

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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