Thermally induced diffusion in GaInNAs/GaAs and GaInAs/GaAs quantum wells grown by solid source molecular beam epitaxy

Tien Khee Ng*, H. S. Djie, S. F. Yoon, T. Mei

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

The effects of the thermal annealing induced diffusion on the photoluminescence (PL) of a GaAsGaInAsGaAsGaInNAsGaAs quantum well (QW) structure grown by solid source molecular beam epitaxy are studied. The PL experimental results in conjunction with the numerical quantum-mechanical modeling that predicts the changes in the QW confining potential with group-III atomic diffusion, have been used to obtain the values for diffusion coefficient. The activation energies of GaInAsGaAs QW (ED,GIA) were found to be between 0.49 to 0.51 eV, while that of GaInNAsGaAs QW (ED,GINA) showed comparable values of between 0.6 to a 0.67 eV, as annealing time increases from 10 to 30 s. The ED,GIA and ED,GINA values are attributed to the same interstitial diffusion mechanism.

Original languageEnglish (US)
Article number013506
JournalJournal of Applied Physics
Volume97
Issue number1
DOIs
StatePublished - Jan 1 2005

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this